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| PartNumber | SI9926CDY-T1-GE3 | SI9926CDY-T1-GE3. | SI9926CDY-T1-GE3-CUT TAPE |
| Description | MOSFET 20V Vds 12V Vgs SO-8 | MOSFET DUAL N-CHANNEL 20-V (D-S) | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 18 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 22 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.1 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Cut Tape | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI9 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 45 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | SI9926CDY-GE3 | - | - |
| Unit Weight | 0.006596 oz | 0.006596 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI9926CDY-T1-GE3 | MOSFET 20V Vds 12V Vgs SO-8 | |
| SI9926CDY-T1-GE3. | MOSFET DUAL N-CHANNEL 20-V (D-S) | ||
| SI9926CDY-T1-GE3-CUT TAPE | New and Original | ||
Vishay |
SI9926CDY-T1-GE3 | MOSFET 2N-CH 20V 8A 8-SOIC |