SI9933BDY-T1-E

SI9933BDY-T1-E vs SI9933BDY-T1-E3 vs SI9933BDY-T1-E3 GE3

 
PartNumberSI9933BDY-T1-ESI9933BDY-T1-E3SI9933BDY-T1-E3 GE3
DescriptionMOSFET 2P-CH 20V 3.6A 8-SOIC
Manufacturer-Vishay Siliconix-
Product Category-FETs - Arrays-
Series---
Packaging-Digi-ReelR-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-2 P-Channel (Dual)-
Power Max-1.1W-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds---
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-3.6A-
Rds On Max Id Vgs-60 mOhm @ 4.7A, 4.5V-
Vgs th Max Id-1.4V @ 250μA-
Gate Charge Qg Vgs-9nC @ 4.5V-
Manufacturer Part # Description RFQ
SI9933BDY-T1-E New and Original
SI9933BDY-T1-E3 GE3 New and Original
SI9933BDY-T1-E3. New and Original
Vishay
Vishay
SI9933BDY-T1-E3 MOSFET 2P-CH 20V 3.6A 8-SOIC
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