SIA445

SIA445EDJ-T1-GE3 vs SIA445EDJT-T1-GE3 vs SIA445EDJ

 
PartNumberSIA445EDJ-T1-GE3SIA445EDJT-T1-GE3SIA445EDJ
DescriptionMOSFET -20V Vds 12V Vgs PowerPAK SC-70MOSFET -20V Vds 12V Vgs Thin PowerPAK SC-70
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SC70-6PowerPAK-SC70-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance16.5 mOhms13.8 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge48 nC69 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation19 W19 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET-
PackagingReelReel-
SeriesSIASIA-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min29 S34 S-
Fall Time20 ns25 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns25 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time55 ns50 ns-
Typical Turn On Delay Time25 ns25 ns-
Part # AliasesSIA445EDJ-GE3--
Height-0.75 mm-
Length-2.05 mm-
Transistor Type-1 P-Channel-
Width-2.05 mm-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIA445EDJ-T1-GE3 MOSFET -20V Vds 12V Vgs PowerPAK SC-70
SIA445EDJT-T1-GE3 MOSFET -20V Vds 12V Vgs Thin PowerPAK SC-70
SIA445EDJ New and Original
Vishay
Vishay
SIA445EDJ-T1-GE3 MOSFET P-CH 20V 12A SC-70
SIA445EDJT-T1-GE3 P-Channel 20 V (D-S) MOSFET
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