SIA48

SIA485DJ-T1-GE3 vs SIA483DJ-T1-GE3 vs SIA483ADJ-T1-GE3

 
PartNumberSIA485DJ-T1-GE3SIA483DJ-T1-GE3SIA483ADJ-T1-GE3
DescriptionMOSFET -150V Vds 20V Vgs PowerPAK SC-70MOSFET -30V Vds 20V Vgs PowerPAK SC-70MOSFET P-Channel 30 V (D-S) MOSFET
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
TradenameTrenchFETTrenchFET, PowerPAKTrenchFET
PackagingReelReelReel
SeriesSIASIA-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Mounting Style-SMD/SMTSMD/SMT
Package / Case-PowerPAK-SC70-6PowerPAK SC-70
Number of Channels-1 Channel1 Channel
Transistor Polarity-P-ChannelP-Channel
Vds Drain Source Breakdown Voltage-30 V- 30 V
Id Continuous Drain Current-12 A- 12 A
Rds On Drain Source Resistance-16 mOhms16 mOhms
Vgs th Gate Source Threshold Voltage-2.2 V5 V
Vgs Gate Source Voltage-20 V- 20 V, + 16 V
Qg Gate Charge-45 nC17 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-19 W-
Configuration-Single-
Channel Mode-EnhancementDepletion
Height-0.75 mm-
Length-2.05 mm-
Transistor Type-1 P-Channel-
Width-2.05 mm-
Forward Transconductance Min-23 S-
Fall Time-8 ns16 ns
Rise Time-30 ns95 ns
Typical Turn Off Delay Time-25 ns24 ns
Typical Turn On Delay Time-37 ns26 ns
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIA485DJ-T1-GE3 MOSFET -150V Vds 20V Vgs PowerPAK SC-70
SIA483DJ-T1-GE3 MOSFET -30V Vds 20V Vgs PowerPAK SC-70
SIA483ADJ-T1-GE3 MOSFET P-Channel 30 V (D-S) MOSFET
Vishay
Vishay
SIA483DJ-T1-GE3 MOSFET P-CH 30V 12A SC70-6
SIA485DJ-T1-GE3 MOSFET P-CHANNEL 150V 1.6A
SIA485DJ-T4-GE3 New and Original
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