PartNumber | SIA485DJ-T1-GE3 | SIA483DJ-T1-GE3 | SIA483ADJ-T1-GE3 |
Description | MOSFET -150V Vds 20V Vgs PowerPAK SC-70 | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 | MOSFET P-Channel 30 V (D-S) MOSFET |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Tradename | TrenchFET | TrenchFET, PowerPAK | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SIA | SIA | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | PowerPAK-SC70-6 | PowerPAK SC-70 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | - | 30 V | - 30 V |
Id Continuous Drain Current | - | 12 A | - 12 A |
Rds On Drain Source Resistance | - | 16 mOhms | 16 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2.2 V | 5 V |
Vgs Gate Source Voltage | - | 20 V | - 20 V, + 16 V |
Qg Gate Charge | - | 45 nC | 17 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 19 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | Depletion |
Height | - | 0.75 mm | - |
Length | - | 2.05 mm | - |
Transistor Type | - | 1 P-Channel | - |
Width | - | 2.05 mm | - |
Forward Transconductance Min | - | 23 S | - |
Fall Time | - | 8 ns | 16 ns |
Rise Time | - | 30 ns | 95 ns |
Typical Turn Off Delay Time | - | 25 ns | 24 ns |
Typical Turn On Delay Time | - | 37 ns | 26 ns |