PartNumber | SIA519 | SIA519EDJ | SIA519EDJ-T1 |
Description | |||
Manufacturer | - | - | |
Product Category | - | - | FETs - Arrays |
Series | - | - | TrenchFETR |
Packaging | - | - | Digi-ReelR Alternate Packaging |
Part Aliases | - | - | SIA519EDJ-GE3 |
Unit Weight | - | - | 0.000988 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | PowerPAKR SC-70-6 Dual |
Technology | - | - | Si |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 2 Channel |
Supplier Device Package | - | - | PowerPAKR SC-70-6 Dual |
Configuration | - | - | 1 N-Channel 1 P-Channel |
FET Type | - | - | N and P-Channel |
Power Max | - | - | 7.8W |
Transistor Type | - | - | 1 N-Channel 1 P-Channel |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | 350pF @ 10V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 4.5A |
Rds On Max Id Vgs | - | - | 40 mOhm @ 4.2A, 4.5V |
Vgs th Max Id | - | - | 1.4V @ 250μA |
Gate Charge Qg Vgs | - | - | 12nC @ 10V |
Pd Power Dissipation | - | - | 7.8 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Id Continuous Drain Current | - | - | 4.5 A |
Vds Drain Source Breakdown Voltage | - | - | 20 V |
Rds On Drain Source Resistance | - | - | 33 mOhms 74 mOhms |
Transistor Polarity | - | - | N-Channel P-Channel |
Qg Gate Charge | - | - | 7.7 nC 10.5 nC |
Forward Transconductance Min | - | - | 7 S 12 S |