| PartNumber | SIB452DK-T1-GE3 | SIB456DK-T1-GE3 | SIB455EDK-T1-GE3 |
| Description | MOSFET 190V Vds 16V Vgs PowerPAK SC-75 | MOSFET 100V Vds 20V Vgs PowerPAK SC-75 | MOSFET RECOMMENDED ALT 78-SIB441EDK-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIB | SIB | SIB |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SIB452DK-GE3 | - | SIB455EDK-GE3 |
| Unit Weight | 0.003386 oz | 0.003386 oz | 0.003386 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | PowerPAK-SC75-6 | PowerPAK-SC75-6 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 100 V | 12 V |
| Id Continuous Drain Current | - | 6.3 A | 9 A |
| Rds On Drain Source Resistance | - | 153 mOhms | 22 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.6 V | 1 V |
| Vgs Gate Source Voltage | - | 20 V | 10 V |
| Qg Gate Charge | - | 5 nC | 30 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 13 W | 13 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 3.7 S | 18 S |
| Fall Time | - | 13 ns | 3.2 us |
| Rise Time | - | 45 ns | 1.4 us |
| Typical Turn Off Delay Time | - | 11 ns | 3.7 us |
| Typical Turn On Delay Time | - | 15 ns | 0.4 us |
| Height | - | - | 0.75 mm |
| Length | - | - | 1.6 mm |
| Width | - | - | 1.6 mm |