PartNumber | SIB452DK-T1-GE3 | SIB456DK-T1-GE3 | SIB455EDK-T1-GE3 |
Description | MOSFET 190V Vds 16V Vgs PowerPAK SC-75 | MOSFET 100V Vds 20V Vgs PowerPAK SC-75 | MOSFET RECOMMENDED ALT 78-SIB441EDK-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Series | SIB | SIB | SIB |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SIB452DK-GE3 | - | SIB455EDK-GE3 |
Unit Weight | 0.003386 oz | 0.003386 oz | 0.003386 oz |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | PowerPAK-SC75-6 | PowerPAK-SC75-6 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 100 V | 12 V |
Id Continuous Drain Current | - | 6.3 A | 9 A |
Rds On Drain Source Resistance | - | 153 mOhms | 22 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1.6 V | 1 V |
Vgs Gate Source Voltage | - | 20 V | 10 V |
Qg Gate Charge | - | 5 nC | 30 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 13 W | 13 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Forward Transconductance Min | - | 3.7 S | 18 S |
Fall Time | - | 13 ns | 3.2 us |
Rise Time | - | 45 ns | 1.4 us |
Typical Turn Off Delay Time | - | 11 ns | 3.7 us |
Typical Turn On Delay Time | - | 15 ns | 0.4 us |
Height | - | - | 0.75 mm |
Length | - | - | 1.6 mm |
Width | - | - | 1.6 mm |