PartNumber | SIHFL9110TR-GE3 | SIHFL110TR-GE3 | SIHFL9014TR-GE3 |
Description | MOSFET 100V Vds 20V Vgs SOT-223 | MOSFET 100V Vds 20V Vgs SOT-223 | MOSFET -60V Vds 20V Vgs SOT-223 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-223-3 | SOT-223-3 | SOT-223-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | N-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 60 V |
Id Continuous Drain Current | 1.1 A | 1.5 A | 1.8 A |
Rds On Drain Source Resistance | 1.2 Ohms | 540 mOhms | 500 mOhms |
Vgs th Gate Source Threshold Voltage | - 4 V | 2 V | - 4 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 8.7 nC | 8.3 nC | 12 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 3.1 W | 3.1 W | 3.1 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Series | SIH | - | SIH |
Transistor Type | 1 P-Channel | 1 N-Channel | 1 P-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 0.82 S | 1.1 S | 1.3 S |
Fall Time | 17 ns | 9.4 ns | 31 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | 16 ns | 63 ns |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15 ns | 15 ns | 9.6 ns |
Typical Turn On Delay Time | 10 ns | 6.9 ns | 11 ns |
Unit Weight | 0.009171 oz | - | - |
Height | - | 1.8 mm | - |
Length | - | 6.5 mm | - |
Width | - | 3.5 mm | - |