SIHA18

SIHA180N60E-GE3 vs SIHA18N60E-E3 vs SIHA18N60E

 
PartNumberSIHA180N60E-GE3SIHA18N60E-E3SIHA18N60E
DescriptionMOSFET 600V Vds 30V Vgs TO-220 FULLPAKMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V650 V-
Id Continuous Drain Current19 A18 A-
Rds On Drain Source Resistance180 mOhms176 mOhms-
Vgs th Gate Source Threshold Voltage3 V4 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge33 nC46 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation33 W34 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
SeriesEE-
Transistor Type1 N-Channel E-Series Power MOSFET--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min5.3 S--
Fall Time23 ns24 ns-
Product TypeMOSFETMOSFET-
Rise Time49 ns24 ns-
Factory Pack Quantity11000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time22 ns51 ns-
Typical Turn On Delay Time14 ns17 ns-
Packaging-Reel-
Unit Weight-0.068784 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHA180N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
SIHA18N60E-E3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
SIHA18N60E New and Original
Vishay
Vishay
SIHA180N60E-GE3 E Series Power MOSFET Thin-Lead TO-220 FULLPAK, 180 m @ 10V
SIHA18N60E-E3 MOSFET N-CHANNEL 600V 18A TO220
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