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| PartNumber | SIHF530STRL-GE3 | SIHF530-GE3 | SIHF530 |
| Description | MOSFET 100V Vds 20V Vgs TO-220AB | MOSFET 100V Vds 20V Vgs TO-220AB | |
| Manufacturer | Vishay | Vishay | VISHAY |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-263-3 | TO-220AB-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 14 A | 14 A | - |
| Rds On Drain Source Resistance | 160 mOhms | 160 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 26 nC | 26 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 88 W | 88 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | - | - |
| Series | SIH | SIH | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 5.1 S | 5.1 S | - |
| Fall Time | 24 ns | 24 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 34 ns | 34 ns | - |
| Factory Pack Quantity | 800 | 1 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23 ns | 23 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Height | - | 15.49 mm | - |
| Length | - | 10.41 mm | - |
| Width | - | 4.7 mm | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHF530STRL-GE3 | MOSFET 100V Vds 20V Vgs TO-220AB | |
| SIHF530-GE3 | MOSFET 100V Vds 20V Vgs TO-220AB | ||
| SIHF530 | New and Original | ||
| SIHF530STRL-GE3 | - Tape and Reel (Alt: SIHF530STRL-GE3) | ||
| SIHF530STRR-GE3 | SIHF530STRR-GE3 N-channel MOSFET Transistor, 14 A, 100 V, 3-Pin D2PAK |