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| PartNumber | SIHF540S-GE3 | SIHF540STRL-GE3 | SIHF540SGE3 |
| Description | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 28 A | 28 A | - |
| Rds On Drain Source Resistance | 77 mOhms | 77 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 72 nC | 72 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 150 W | 150 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Height | 4.83 mm | 4.83 mm | - |
| Length | 10.67 mm | 10.67 mm | - |
| Series | SIHF | SIHF | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.65 mm | 9.65 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 8.7 S | 8.7 S | - |
| Fall Time | 43 ns | 43 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 44 ns | 44 ns | - |
| Factory Pack Quantity | 1 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 53 ns | 53 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Packaging | - | Reel | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHF540S-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | |
| SIHF540STRL-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | ||
| SIHF540S-GE3 | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK | ||
| SIHF540SGE3 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHF540STRL-GE3 | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK T/R |