PartNumber | SIHF640S-GE3 | SIHF6N65E-GE3 | SIHF6N40D-E3 |
Description | MOSFET 200V Vds 20V Vgs D2PAK (TO-263) | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK | MOSFET 400V Vds 30V Vgs TO-220 FULLPAK |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | Through Hole |
Package / Case | TO-263-3 | TO-220FP-3 | TO-220FP-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 650 V | 400 V |
Id Continuous Drain Current | 18 A | 7 A | 6 A |
Rds On Drain Source Resistance | 180 mOhms | 600 mOhms | 1 Ohms |
Vgs th Gate Source Threshold Voltage | 2 V | 4 V | 5 V |
Vgs Gate Source Voltage | 20 V | 30 V | 30 V |
Qg Gate Charge | 70 nC | 24 nC | 9 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 130 W | 31 W | 30 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Height | 4.83 mm | 15.49 mm | - |
Length | 10.67 mm | 10.41 mm | - |
Transistor Type | 1 N-Channel | - | - |
Width | 9.65 mm | 4.7 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 6.7 S | - | - |
Fall Time | 36 ns | 20 ns | 8 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 51 ns | 12 ns | 11 ns |
Factory Pack Quantity | 1 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 45 ns | 30 ns | 14 ns |
Typical Turn On Delay Time | 14 ns | 14 ns | 12 ns |
Packaging | - | Tube | Tube |
Series | - | E | D |
Unit Weight | - | 0.211644 oz | 0.211644 oz |