SIHF6

SIHF640S-GE3 vs SIHF6N65E-GE3 vs SIHF6N40D-E3

 
PartNumberSIHF640S-GE3SIHF6N65E-GE3SIHF6N40D-E3
DescriptionMOSFET 200V Vds 20V Vgs D2PAK (TO-263)MOSFET 650V Vds 30V Vgs TO-220 FULLPAKMOSFET 400V Vds 30V Vgs TO-220 FULLPAK
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleThrough Hole
Package / CaseTO-263-3TO-220FP-3TO-220FP-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V650 V400 V
Id Continuous Drain Current18 A7 A6 A
Rds On Drain Source Resistance180 mOhms600 mOhms1 Ohms
Vgs th Gate Source Threshold Voltage2 V4 V5 V
Vgs Gate Source Voltage20 V30 V30 V
Qg Gate Charge70 nC24 nC9 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation130 W31 W30 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
Height4.83 mm15.49 mm-
Length10.67 mm10.41 mm-
Transistor Type1 N-Channel--
Width9.65 mm4.7 mm-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min6.7 S--
Fall Time36 ns20 ns8 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time51 ns12 ns11 ns
Factory Pack Quantity15050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time45 ns30 ns14 ns
Typical Turn On Delay Time14 ns14 ns12 ns
Packaging-TubeTube
Series-ED
Unit Weight-0.211644 oz0.211644 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHF640S-GE3 MOSFET 200V Vds 20V Vgs D2PAK (TO-263)
SIHF6N65E-GE3 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
SIHF6N40D-E3 MOSFET 400V Vds 30V Vgs TO-220 FULLPAK
Vishay
Vishay
SIHF6N40D-E3 Darlington Transistors MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
SIHF6N65E-GE3 IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
SIHF634NS New and Original
SIHF640S New and Original
SIHF644 New and Original
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