SIHF9

SIHF9520S-GE3 vs SIHF9540S-GE3 vs SIHF9540PBF

 
PartNumberSIHF9520S-GE3SIHF9540S-GE3SIHF9540PBF
DescriptionMOSFET 100V Vds 20V Vgs D2PAK (TO-263)MOSFET 100V Vds 20V Vgs D2PAK (TO-263)MOSFET -100V Vds +/-20V Vgs Rds(on) 0.20 @-10V
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current6.8 A19 A-
Rds On Drain Source Resistance600 mOhms200 mOhms-
Vgs th Gate Source Threshold Voltage- 4 V- 4 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge18 nC61 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation60 W150 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
Height4.83 mm--
Length10.67 mm--
SeriesSIHSIH-
Transistor Type1 P-Channel1 P-Channel-
Width9.65 mm--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min2 S6.2 S-
Fall Time25 ns57 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time29 ns73 ns-
Factory Pack Quantity11-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time21 ns34 ns-
Typical Turn On Delay Time29 ns16 ns-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHF9520S-GE3 MOSFET 100V Vds 20V Vgs D2PAK (TO-263)
SIHF9630STRL-GE3 MOSFET -200V Vds 20V Vgs D2PAK (TO-263)
SIHF9630S-GE3 MOSFET -200V Vds 20V Vgs D2PAK (TO-263)
SIHF9640S-GE3 MOSFET -200V Vds 20V Vgs D2PAK (TO-263)
SIHF9540S-GE3 MOSFET 100V Vds 20V Vgs D2PAK (TO-263)
SIHF9540PBF MOSFET -100V Vds +/-20V Vgs Rds(on) 0.20 @-10V
SIHF9630 New and Original
SIHF9640STRL-GE3 New and Original
SIHF9Z14S-GE3 SIHF9Z14S-GE3 P-channel MOSFET Transistor, 4.7 A, 60 V, 3-Pin D2PAK
SIHF9Z34 New and Original
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