SIHG14

SIHG14N50D-GE3 vs SIHG14N50D-E3

 
PartNumberSIHG14N50D-GE3SIHG14N50D-E3
DescriptionMOSFET 500V Vds 30V Vgs TO-247ACMOSFET 500V Vds 30V Vgs TO-247AC
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-247AC-3TO-247AC-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V
Id Continuous Drain Current14 A14 A
Rds On Drain Source Resistance400 mOhms400 mOhms
Vgs th Gate Source Threshold Voltage5 V5 V
Vgs Gate Source Voltage30 V30 V
Qg Gate Charge29 nC29 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation208 W208 W
ConfigurationSingleSingle
PackagingReelTube
SeriesDD
BrandVishay / SiliconixVishay / Siliconix
Product TypeMOSFETMOSFET
Factory Pack Quantity500500
SubcategoryMOSFETsMOSFETs
Unit Weight1.340411 oz1.340411 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHG14N50D-GE3 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG14N50D-E3 MOSFET 500V Vds 30V Vgs TO-247AC
Vishay
Vishay
SIHG14N50D-GE3 RF Bipolar Transistors MOSFET MOSFET N-CHANNEL 500V
SIHG14N50D-E3 RF Bipolar Transistors MOSFET 500V 400mOhm@10V 14A N-Ch D-SRS
SIHG14N50D New and Original
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