SIHG20N5

SIHG20N50C-E3 vs SIHG20N50E-GE3

 
PartNumberSIHG20N50C-E3SIHG20N50E-GE3
DescriptionMOSFET 500V Vds 30V Vgs TO-247ACMOSFET 500V Vds 30V Vgs TO-247AC
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSEY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-247AC-3TO-247AC-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V
Id Continuous Drain Current20 A19 A
Rds On Drain Source Resistance270 mOhms184 mOhms
Vgs th Gate Source Threshold Voltage3 V4 V
Vgs Gate Source Voltage10 V30 V
Qg Gate Charge65 nC46 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation250 mW179 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingTubeReel
Height20.82 mm20.82 mm
Length15.87 mm15.87 mm
Transistor Type1 N-Channel-
Width5.31 mm5.31 mm
BrandVishay / SiliconixVishay / Siliconix
Forward Transconductance Min6.4 S-
Fall Time44 ns25 ns
Product TypeMOSFETMOSFET
Rise Time27 ns27 ns
Factory Pack Quantity500500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time32 ns48 ns
Typical Turn On Delay Time80 ns17 ns
Unit Weight1.340411 oz-
Series-E
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHG20N50C-E3 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG20N50E-GE3 MOSFET 500V Vds 30V Vgs TO-247AC
Vishay
Vishay
SIHG20N50E-GE3 IGBT Transistors MOSFET N-Channel 500V
SIHG20N50C-E3 MOSFET N-CH 500V 20A TO247
SIHG20N50 New and Original
SIHG20N50-C New and Original
SIHG20N50C Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
SIHG20N50C G20N50C New and Original
SIHG20N50C-3 New and Original
SIHG20N50C-E3,SIHG20N50C New and Original
SIHG20N50C3-E3 New and Original
SIHG20N50G New and Original
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