 | | |
| PartNumber | SIHG22N50D-E3 | SIHG22N50D-GE3 |
| Description | MOSFET 500V Vds 30V Vgs TO-247AC | MOSFET 500V Vds 30V Vgs TO-247AC |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 22 A | 22 A |
| Rds On Drain Source Resistance | 230 mOhms | 230 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | 5 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 49 nC | 49 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 312 W | 312 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Tube |
| Height | 20.82 mm | 20.82 mm |
| Length | 15.87 mm | 15.87 mm |
| Series | D | D |
| Width | 5.31 mm | 5.31 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 40 ns | 40 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 42 ns | 42 ns |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 47 ns | 47 ns |
| Typical Turn On Delay Time | 21 ns | 21 ns |
| Part # Aliases | SIHG22N50D | - |
| Unit Weight | 1.340411 oz | 1.340411 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHG22N50D-E3 | MOSFET 500V Vds 30V Vgs TO-247AC | |
| SIHG22N50D-GE3 | MOSFET 500V Vds 30V Vgs TO-247AC | ||
Vishay |
SIHG22N50D-GE3 | IGBT Transistors MOSFET 500V 230mOhm@10V 22A N-Ch D-SRS | |
| SIHG22N50D-E3 | MOSFET N-CH 500V 22A TO-247AC | ||
| SIHG22N50D | New and Original | ||
| SIHG22N50DGE3 | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC |