 |  |  | |
| PartNumber | SIHG47N60AEF-GE3 | SIHG47N60AEL-GE3 | SIHG47N60AE-GE3 |
| Description | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 40 A | 47 A | 43 A |
| Rds On Drain Source Resistance | 70 mOhms | 65 mOhms | 56 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 10 V | 30 V |
| Qg Gate Charge | 189 nC | 111 nC | 121 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 313 W | 379 W | 313 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | EF | EL | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 13 S | 29 S | - |
| Fall Time | 67 ns | 71 ns | 63 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 63 ns | 65 ns | 90 ns |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 143 ns | 267 ns | 108 ns |
| Typical Turn On Delay Time | 35 ns | 55 ns | 34 ns |
| Transistor Type | - | 1 N-Channel | - |
| Factory Pack Quantity | - | 1 | 500 |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.211644 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHG47N60AEF-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | |
| SIHG47N60AEL-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG47N60AE-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG47N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-247AC | ||
| SIHG47N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG47N60E-E3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG47N60EF-GE3 | MOSFET RECOMMENDED ALT 78-SIHW47N60EF-GE3 | ||
Vishay |
SIHG47N60E-E3 | IGBT Transistors MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS | |
| SIHG47N60EF-GE3 | IGBT Transistors MOSFET 600V 67mOhms@10V 47A N-Ch EF-SRS | ||
| SIHG47N65E-GE3 | RF Bipolar Transistors MOSFET 650V 72mOhm@10V 47A N-Ch E-SRS | ||
| SIHG47N60AEL-GE3 | MOSFET N-CHAN 600V | ||
| SIHG47N60E-GE3 | MOSFET N-CH 600V 47A TO247AC | ||
| SIHG47N60AE-GE3 | MOSFET N-CH 600V 43A TO247AC | ||
| SIHG47N60S-E3 | IGBT Transistors MOSFET N-CHANNEL 600V | ||
| SIHG47N605 | New and Original | ||
| SIHG47N60E | New and Original | ||
| SIHG47N60E-GE3 G47N60E | New and Original | ||
| SIHG47N60E-GE3,SIHG47N60 | New and Original | ||
| SIHG47N60EF | New and Original | ||
| SIHG47N60EGE3 | Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | ||
| SIHG47N60S | New and Original | ||
| SIHG47N60S-E3,G47N60S,SI | New and Original | ||
| SIHG47N60S-E3,SIHG47N60S | New and Original | ||
| SIHG47N65E | New and Original | ||
| SIHG47N80S-E3 | New and Original |