 | | |
| PartNumber | SIHG64N65E-GE3 | SIHG61N65EF-GE3 |
| Description | MOSFET 650V Vds 30V Vgs TO-247AC | MOSFET 650V Vds 30V Vgs TO-247AC |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | - |
| Id Continuous Drain Current | 64 A | - |
| Rds On Drain Source Resistance | 47 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - |
| Vgs Gate Source Voltage | 30 V | - |
| Qg Gate Charge | 239 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 520 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Series | E | SIH |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 103 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 122 ns | - |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 213 ns | - |
| Typical Turn On Delay Time | 66 ns | - |
| Unit Weight | 0.211644 oz | - |
| Packaging | - | Tube |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHG64N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-247AC | |
| SIHG61N65EF-GE3 | MOSFET 650V Vds 30V Vgs TO-247AC | ||
Vishay |
SIHG64N65E-GE3 | MOSFET N-CH 650V 64A TO247AC | |
| SIHG61N65EF-GE3 | E Series Power MOSFET with Fast Body Diode | ||
| SIHG68N60E | New and Original |