PartNumber | SIHL630STRL-GE3 | SIHLL110TR-GE3 | SIHLR120-GE3 |
Description | MOSFET 200V Vds 10V Vgs D2PAK (TO-263) | MOSFET 100V Vds 20V Vgs SOT-223 | MOSFET 100V Vds 10V Vgs DPAK (TO-252) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | SOT-223-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 100 V | 100 V |
Id Continuous Drain Current | 9 A | 1.5 A | 7.7 A |
Rds On Drain Source Resistance | 400 mOhms | 540 mOhms | 270 mOhms |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 40 nC | 6.1 nC | 12 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 74 W | 3.1 W | 42 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | - | - |
Height | 4.83 mm | - | - |
Length | 10.67 mm | - | - |
Series | SIH | - | SIH |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.65 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 4.8 S | 0.57 S | 4.4 S |
Fall Time | 33 ns | 18 ns | 27 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 57 ns | 47 ns | 64 ns |
Factory Pack Quantity | 800 | 1 | 1 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 38 ns | 16 ns | 21 ns |
Typical Turn On Delay Time | 8 ns | 9.3 ns | 9.8 ns |