SIHP10

SIHP100N60E-GE3 vs SIHP10N40D-E3 vs SIHP105N60EF-GE3

 
PartNumberSIHP100N60E-GE3SIHP10N40D-E3SIHP105N60EF-GE3
DescriptionMOSFET 650V Vds; 30V Vgs TO-220ABMOSFET 400V Vds 30V Vgs TO-220ABMOSFET EF Series Power MOSFET With Fast Body Diode
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220AB-3TO-220AB-3TO-220AB-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V400 V600 V
Id Continuous Drain Current30 A10 A29 A
Rds On Drain Source Resistance100 mOhms600 mOhms88 mOhms
Vgs th Gate Source Threshold Voltage3 V5 V5 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge50 nC15 nC35 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation208 W147 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTube-
SeriesEDEF
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min11 S--
Fall Time20 ns14 ns19 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time34 ns18 ns28 ns
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time33 ns18 ns39 ns
Typical Turn On Delay Time21 ns12 ns20 ns
Height-15.49 mm-
Length-10.41 mm-
Width-4.7 mm-
Unit Weight-0.211644 oz-
Tradename--TrenchFET
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHP100N60E-GE3 MOSFET 650V Vds; 30V Vgs TO-220AB
SIHP10N40D-E3 MOSFET 400V Vds 30V Vgs TO-220AB
SIHP105N60EF-GE3 MOSFET EF Series Power MOSFET With Fast Body Diode
SIHP10N40D-GE3 MOSFET 400V Vds 30V Vgs TO-220AB
Vishay
Vishay
SIHP10N40D-GE3 IGBT Transistors MOSFET 450V 600mOhms@10V 10A N-Ch D-SRS
SIHP10N40D-E3 MOSFET N-CH 400V 10A TO-220AB
SIHP100N60E-GE3 E Series Power MOSFET TO-220AB, 100 m @ 10V
SIHP10N40D New and Original
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