PartNumber | SIHP100N60E-GE3 | SIHP10N40D-E3 | SIHP105N60EF-GE3 |
Description | MOSFET 650V Vds; 30V Vgs TO-220AB | MOSFET 400V Vds 30V Vgs TO-220AB | MOSFET EF Series Power MOSFET With Fast Body Diode |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 400 V | 600 V |
Id Continuous Drain Current | 30 A | 10 A | 29 A |
Rds On Drain Source Resistance | 100 mOhms | 600 mOhms | 88 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 5 V | 5 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 50 nC | 15 nC | 35 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 208 W | 147 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | - |
Series | E | D | EF |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 11 S | - | - |
Fall Time | 20 ns | 14 ns | 19 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 34 ns | 18 ns | 28 ns |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 33 ns | 18 ns | 39 ns |
Typical Turn On Delay Time | 21 ns | 12 ns | 20 ns |
Height | - | 15.49 mm | - |
Length | - | 10.41 mm | - |
Width | - | 4.7 mm | - |
Unit Weight | - | 0.211644 oz | - |
Tradename | - | - | TrenchFET |