SIHP2

SIHP28N65EF-GE3 vs SIHP28N65E-GE3 vs SIHP28N60EF-GE3

 
PartNumberSIHP28N65EF-GE3SIHP28N65E-GE3SIHP28N60EF-GE3
DescriptionMOSFET 650V Vds 30V Vgs TO-220ABMOSFET 650V Vds 30V Vgs TO-220ABMOSFET 600V Vds 30V Vgs TO-220AB
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220AB-3TO-220AB-3TO-220AB-3
PackagingTubeTubeTube
SeriesEFEEF
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Vds Drain Source Breakdown Voltage-650 V-
Id Continuous Drain Current-29 A-
Rds On Drain Source Resistance-97 mOhms-
Vgs th Gate Source Threshold Voltage-4 V-
Vgs Gate Source Voltage-30 V-
Qg Gate Charge-93 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-250 W-
Configuration-Single-
Channel Mode-Enhancement-
Fall Time-45 ns-
Rise Time-42 ns-
Typical Turn Off Delay Time-88 ns-
Typical Turn On Delay Time-28 ns-
Unit Weight-0.211644 oz0.211644 oz
Height--15.49 mm
Length--10.41 mm
Width--4.7 mm
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHP28N65EF-GE3 MOSFET 650V Vds 30V Vgs TO-220AB
SIHP28N65E-GE3 MOSFET 650V Vds 30V Vgs TO-220AB
SIHP28N60EF-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
Vishay
Vishay
SIHP28N60EF-GE3 IGBT Transistors MOSFET 600V 123mOhms@10V 28A N-Ch MOSFET
SIHP28N65E-GE3 RF Bipolar Transistors MOSFET 700V 122mOhms@10V 28A N-Channel
SIHP28N65EF-GE3 MOSFET N-CH 650V 28A TO-220AB
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