SIHP22

SIHP22N60AEL-GE3 vs SIHP22N60AE-GE3 vs SIHP22N60E-E3

 
PartNumberSIHP22N60AEL-GE3SIHP22N60AE-GE3SIHP22N60E-E3
DescriptionMOSFET 600V Vds 30V Vgs TO-220ABMOSFET 600V Vds 30V Vgs TO-220ABMOSFET 600V Vds 30V Vgs TO-220AB
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220AB-3TO-220AB-3TO-220AB-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current21 A20 A21 A
Rds On Drain Source Resistance180 mOhms156 mOhms180 mOhms
Vgs th Gate Source Threshold Voltage2 V4 V4 V
Vgs Gate Source Voltage10 V30 V30 V
Qg Gate Charge41 nC48 nC57 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation208 W179 W227 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
SeriesELSIHE
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min16 S--
Fall Time28 ns21 ns35 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time24 ns33 ns27 ns
Factory Pack Quantity1100050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time86 ns45 ns66 ns
Typical Turn On Delay Time27 ns19 ns18 ns
Packaging-TubeTube
Height-15.49 mm-
Length-10.41 mm-
Width-4.7 mm-
Unit Weight-0.063493 oz0.211644 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHP22N60EF-GE3 MOSFET Nch 600V Vds 30V Vgs TO-220AB; w/diode
SIHP22N60AEL-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP22N60AE-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP22N60E-E3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP22N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP22N65E-GE3 MOSFET 650V Vds 30V Vgs TO-220AB
SIHP22N60EL-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP22N60S-E3 IGBT Transistors MOSFET 600V N-Channel Superjunction TO-220
SIHP22N60E New and Original
SIHP22N60E-E3 P22N60E New and Original
SIHP22N60E-E3,SIHP22N60S New and Original
SIHP22N60EE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHP22N60EGE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHP22N60S New and Original
SIHP22N60S-E3/45 New and Original
SIHP22N60EF-GE3 MOSFET N-CHAN 600V TO-220AB
Vishay
Vishay
SIHP22N65E-GE3 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
SIHP22N60AEL-GE3 MOSFET N-CHAN 600V
SIHP22N60E-E3 MOSFET N-CH 600V 21A TO220AB
SIHP22N60E-GE3 MOSFET N-CH 600V 21A TO220AB
SIHP22N60AE-GE3 MOSFET N-CH 600V 20A TO220AB
SIHP22N60EL-GE3 MOSFET N-CH 600V 21A TO220AB
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