PartNumber | SIHP240N60E-GE3 | SIHP24N65E-GE3 | SIHP24N65E-E3 |
Description | MOSFET 600V Vds; +/-30V Vgs TO-220AB | MOSFET 650V Vds 30V Vgs TO-220AB | MOSFET 650V Vds 30V Vgs TO-220AB |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | 650 V |
Id Continuous Drain Current | 12 A | 24 A | 24 A |
Rds On Drain Source Resistance | 240 mOhms | 145 mOhms | 145 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 4 V | 4 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 23 nC | 81 nC | 81 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 78 W | 250 W | 250 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Series | E | E | E |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 3.4 S | - | - |
Fall Time | 14 ns | 69 ns | 69 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 14 ns | 84 ns | 84 ns |
Factory Pack Quantity | 1 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 27 ns | 70 ns | 70 ns |
Typical Turn On Delay Time | 15 ns | 24 ns | 24 ns |
Packaging | - | Tube | Tube |
Height | - | 15.49 mm | 15.49 mm |
Length | - | 10.41 mm | 10.41 mm |
Width | - | 4.7 mm | 4.7 mm |
Unit Weight | - | 0.211644 oz | 0.211644 oz |