SIHP24

SIHP240N60E-GE3 vs SIHP24N65E-GE3 vs SIHP24N65E-E3

 
PartNumberSIHP240N60E-GE3SIHP24N65E-GE3SIHP24N65E-E3
DescriptionMOSFET 600V Vds; +/-30V Vgs TO-220ABMOSFET 650V Vds 30V Vgs TO-220ABMOSFET 650V Vds 30V Vgs TO-220AB
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220AB-3TO-220AB-3TO-220AB-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V650 V650 V
Id Continuous Drain Current12 A24 A24 A
Rds On Drain Source Resistance240 mOhms145 mOhms145 mOhms
Vgs th Gate Source Threshold Voltage3 V4 V4 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge23 nC81 nC81 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation78 W250 W250 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
SeriesEEE
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min3.4 S--
Fall Time14 ns69 ns69 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time14 ns84 ns84 ns
Factory Pack Quantity15050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time27 ns70 ns70 ns
Typical Turn On Delay Time15 ns24 ns24 ns
Packaging-TubeTube
Height-15.49 mm15.49 mm
Length-10.41 mm10.41 mm
Width-4.7 mm4.7 mm
Unit Weight-0.211644 oz0.211644 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHP240N60E-GE3 MOSFET 600V Vds; +/-30V Vgs TO-220AB
SIHP24N65E-GE3 MOSFET 650V Vds 30V Vgs TO-220AB
SIHP24N65E-E3 MOSFET 650V Vds 30V Vgs TO-220AB
SIHP24N65EF-GE3 MOSFET 650V Vds 30V Vgs TO-220AB
Vishay
Vishay
SIHP24N65E-GE3 IGBT Transistors MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS
SIHP24N65EF-GE3 RF Bipolar Transistors MOSFET 650V 156mOhms@10V 24A N-Ch EF-SRS
SIHP240N60E-GE3 MOSFET N-CHAN 600V TO-220AB
SIHP24N65E-E3 MOSFET N-CH 650V 24A TO220AB
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