 | | |
| PartNumber | SIHP5N50D-E3 | SIHP5N50D-GE3 |
| Description | MOSFET 500V Vds 30V Vgs TO-220AB | MOSFET 500V Vds 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 5.3 A | 5.3 A |
| Rds On Drain Source Resistance | 1.5 Ohms | 1.5 Ohms |
| Vgs th Gate Source Threshold Voltage | 5 V | 5 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 10 nC | 10 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 104 W | 104 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Height | 15.49 mm | 15.49 mm |
| Length | 10.41 mm | 10.41 mm |
| Series | D | D |
| Width | 4.7 mm | 4.7 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 11 ns | 11 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 11 ns | 11 ns |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 14 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns |
| Part # Aliases | SIHP5N50D-GE3 | SIHP5N50D-E3 |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP5N50D-E3 | MOSFET 500V Vds 30V Vgs TO-220AB | |
| SIHP5N50D-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP5N50D-GE3 | IGBT Transistors MOSFET 500V 5A 1.5Ohm @ 10V | |
| SIHP5N50D-E3 | MOSFET N-CH 500V 5.3A TO220AB | ||
| SIHP5N50D | New and Original |