 |  | | |
| PartNumber | SIHS36N50D-E3 | SIHS20N50C-E3 | SIHS90N65E-E3 |
| Description | MOSFET 500V Vds 30V Vgs Super-247 | MOSFET 500V Vds 30V Vgs Super-247 | MOSFET 650V Vds 30V Vgs Super-247 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 650 V |
| Id Continuous Drain Current | 36 A | 20 A | 87 A |
| Rds On Drain Source Resistance | 130 mOhms | 270 mOhms | 25 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | 5 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 83 nC | 65 nC | 394 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 446 W | 250 W | 625 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | - | Reel |
| Height | 20.82 mm | 20.8 mm | - |
| Length | 15.87 mm | 16.1 mm | - |
| Series | D | - | E |
| Width | 5.31 mm | 5.3 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 68 ns | 44 ns | 267 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 89 ns | 27 ns | 152 ns |
| Factory Pack Quantity | 500 | 500 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 79 ns | 32 ns | 323 ns |
| Typical Turn On Delay Time | 33 ns | 80 ns | 85 ns |
| Part # Aliases | SIHS36N50D | - | - |
| Unit Weight | 1.340411 oz | 0.211644 oz | 0.001764 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHS36N50D-E3 | MOSFET 500V Vds 30V Vgs Super-247 | |
| SIHS20N50C-E3 | MOSFET 500V Vds 30V Vgs Super-247 | ||
| SIHS90N65E-E3 | MOSFET 650V Vds 30V Vgs Super-247 | ||
Vishay |
SIHS36N50D-E3 | RF Bipolar Transistors MOSFET 500V 130mOhm@10V 36A N-Ch D-SRS | |
| SIHS20N50C-E3 | MOSFET N-CH 500V 20A TO-247AD | ||
| SIHS90N65E-E3 | MOSFET N-CH 650V 87A SUPER247 | ||
| SIHS20N50C | New and Original | ||
| SIHS36N50D | New and Original | ||
| SIHS36N50DE3 | Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA |