SIR10

SIR106DP-T1-RE3 vs SIR104DP-T1-RE3 vs SiR108DP-T1-RE3

 
PartNumberSIR106DP-T1-RE3SIR104DP-T1-RE3SiR108DP-T1-RE3
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK SO-8MOSFET 100V Vds 20V Vgs PowerPAK SO-8MOSFET 100V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8PowerPAK-SO-8PowerPAK-SO-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V100 V
Id Continuous Drain Current65.8 A79 A45 A
Rds On Drain Source Resistance6.6 mOhms7.4 mOhms13.5 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage10 V7.5 V20 V
Qg Gate Charge42.5 nC56 nC41.5 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation83.3 W100 W65.7 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReelReel
SeriesSIRSIRSIR
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time6 ns7 ns6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time7 ns7 ns6 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time27 ns29 ns22 ns
Typical Turn On Delay Time15 ns7 ns13 ns
Forward Transconductance Min--48 S
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR106DP-T1-RE3 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
SIR104DP-T1-RE3 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
SiR108DP-T1-RE3 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
Vishay
Vishay
SIR104DP-T1-RE3 MOSFET N-CHAN 100V POWERPAK SO-8
SIR108DP-T1-RE3 MOSFET N-CHAN 100V POWERPAK SO-8
SIR106DP-T1-RE3 MOSFET N-CHAN 100V POWERPAK SO-8
SIR106DP-T1-E3 New and Original
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