 |  | | |
| PartNumber | SIR170DP-T1-RE3 | SIR17-21C/TR8 | SIR172ADP |
| Description | MOSFET N-Channel 100 V (D-S) MOSFET | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 95 A | - | - |
| Rds On Drain Source Resistance | 4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | - 5.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 93 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Channel Mode | Depletion | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 43 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR170DP-T1-RE3 | MOSFET N-Channel 100 V (D-S) MOSFET | |
| SIR17-21C/TR8 | New and Original | ||
| SIR172ADP | New and Original | ||
| SIR172ADP-T1 | New and Original | ||
| SIR172ADP-T1-CE3 | New and Original | ||
| SIR172ADP-T1-E3 | New and Original | ||
| SIR172ADPT1GE3 | Power Field-Effect Transistor, 24A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIR172D-T1-GE3 | New and Original | ||
| SIR172DP | New and Original | ||
| SIR172DP-GE3 | New and Original | ||
| SIR172DP-T1-E3 | New and Original | ||
| SIR172DP-TGE3 | New and Original | ||
| SIR176DP-T1-E3 | New and Original | ||
Vishay |
SIR172ADP-T1-GE3 | MOSFET N-CH 30V 24A 8-SO | |
| SIR172DP-T1-GE3 | MOSFET N-CH 30V 20A PPAK SO-8 |