PartNumber | SIR410DP-T1-GE3 | SIR416DP-T1-GE3 | SIR414DP-T1-GE3 |
Description | MOSFET 20V Vds 20V Vgs PowerPAK SO-8 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | 1.04 mm | - |
Length | 6.15 mm | 6.15 mm | - |
Series | SIR | SIR | SIR |
Width | 5.15 mm | 5.15 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SIR410DP-GE3 | SIR416DP-GE3 | SIR414DP-GE3 |
Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | - | 40 V |
Id Continuous Drain Current | - | - | 50 A |
Rds On Drain Source Resistance | - | - | 2.3 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 1 V |
Vgs Gate Source Voltage | - | - | 20 V |
Qg Gate Charge | - | - | 117 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 83 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Transistor Type | - | - | 1 N-Channel |
Forward Transconductance Min | - | - | 102 S |
Fall Time | - | - | 9 ns |
Rise Time | - | - | 9 ns |
Typical Turn Off Delay Time | - | - | 41 ns |
Typical Turn On Delay Time | - | - | 14 ns |