SIR462DP-T

SIR462DP-T1-GE3 vs SIR462DP-T1 vs SIR462DP-T1-E3

 
PartNumberSIR462DP-T1-GE3SIR462DP-T1SIR462DP-T1-E3
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVISHAY-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance7.9 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge20 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation41.7 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
SeriesSIR--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / Siliconix--
Forward Transconductance Min70 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSIR462DP-GE3--
Unit Weight0.017870 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR462DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIR462DP-T1-GE3-CUT TAPE New and Original
SIR462DP-T1 New and Original
SIR462DP-T1-E3 New and Original
SIR462DP-TI-GE3 New and Original
Vishay
Vishay
SIR462DP-T1-GE3 MOSFET N-CH 30V 30A PPAK SO-8
Top