PartNumber | SIR800DP-T1-GE3 | SIR800DP-T1-RE3 | SIR800DP |
Description | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | E | Y | - |
Technology | Si | Si | - |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
Packaging | Reel | Reel | - |
Series | SIR | SIR | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SIR800DP-GE3 | - | - |
Unit Weight | 0.017870 oz | 0.017870 oz | - |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | PowerPAK-SO-8 | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 50 A | - |
Rds On Drain Source Resistance | - | 1.9 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 600 mV | - |
Vgs Gate Source Voltage | - | 12 V | - |
Qg Gate Charge | - | 89 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 69 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Forward Transconductance Min | - | 96 S | - |
Fall Time | - | 10 ns | - |
Rise Time | - | 8 ns | - |
Typical Turn Off Delay Time | - | 54 ns | - |
Typical Turn On Delay Time | - | 13 ns | - |