PartNumber | SIR826DP-T1-GE3 | SIR826ADP-T1-GE3 | SIR826BDP-T1-RE3 |
Description | MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
Id Continuous Drain Current | 60 A | 60 A | 80.8 A |
Rds On Drain Source Resistance | 4.8 mOhms | 4.6 mOhms | 5.1 mOhms |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 2 V |
Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
Qg Gate Charge | 60 nC | 86 nC | 69 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 104 W | 104 W | 83 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | - | - |
Length | 6.15 mm | - | - |
Series | SIR | SIR | SIR |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel TrenchFET Power MOSFET |
Width | 5.15 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 80 S | 68 S | 65 S |
Fall Time | 8 ns | 7 ns | 8 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | 12 ns | 8 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 36 ns | 34 ns | 25 ns |
Typical Turn On Delay Time | 12 ns | 9 ns | 14 ns |
Part # Aliases | SIR826DP-GE3 | - | - |
Unit Weight | 0.017870 oz | 0.017870 oz | - |