SIR880

SIR880ADP-T1-GE3 vs SIR880ADP vs SIR880DP

 
PartNumberSIR880ADP-T1-GE3SIR880ADPSIR880DP
DescriptionMOSFET 80V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVISHAY-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance5.2 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge72 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation83 W--
ConfigurationSingleDual-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKThunderFET TrenchFET-
PackagingReelReel-
Height1.04 mm--
Length6.15 mm--
SeriesSIRSIRxxxADP-
Transistor Type1 N-Channel2 N-Channel-
Width5.15 mm--
BrandVishay / Siliconix--
Forward Transconductance Min63 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesSIR880ADP-GE3--
Unit Weight0.017870 oz0.017870 oz-
Part Aliases-SIR880ADP-GE3-
Package Case-SO-8-
Pd Power Dissipation-83 W-
Id Continuous Drain Current-60 A-
Vds Drain Source Breakdown Voltage-80 V-
Vgs th Gate Source Threshold Voltage-3 V-
Rds On Drain Source Resistance-6.3 mOhms-
Qg Gate Charge-24 nC-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR880ADP-T1-GE3 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
SIR880DP-T1-GE3 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
SIR880ADP New and Original
SIR880DP New and Original
Vishay
Vishay
SIR880ADP-T1-GE3 MOSFET N-CH 80V 60A PPAK SO-8
SIR880DP-T1-GE3 MOSFET N-CH 80V 60A PPAK SO-8
Top