| PartNumber | SIS407ADN-T1-GE3 | SIS407DN-T1-GE3 |
| Description | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 18 A | 25 A |
| Rds On Drain Source Resistance | 9 mOhms | 9.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 400 mV | 400 mV |
| Vgs Gate Source Voltage | 4.5 V | 4.5 V |
| Qg Gate Charge | 112 nC | 38 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 39.1 W | 33 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel |
| Height | 1.04 mm | 1.04 mm |
| Length | 3.3 mm | 3.3 mm |
| Series | SIS | SIS |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Width | 3.3 mm | 3.3 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 70 S | 60 S |
| Fall Time | 36 ns | 38 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 4 ns | 28 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 120 ns | 92 ns |
| Typical Turn On Delay Time | 12 ns | 23 ns |
| Part # Aliases | - | SIS407DN-GE3 |