PartNumber | SIS412DN-T1-GE3 | SIS412DN-T1-GE | SIS412DN-T1-GE3 QFN8 |
Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PowerPAK-1212-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 12 A | - | - |
Rds On Drain Source Resistance | 24 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 8 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 10 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET, PowerPAK | - | - |
Packaging | Reel | - | - |
Series | SIS | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 17 S | - | - |
Fall Time | 10 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 10 ns, 12 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13 ns, 15 ns | - | - |
Typical Turn On Delay Time | 5 ns, 15 ns | - | - |
Part # Aliases | SIS412DN-GE3 | - | - |