SIS476

SIS476DN-T1-GE3 vs SIS476DN-T1-GE3-CUT TAPE vs SIS476DN-T1-GE

 
PartNumberSIS476DN-T1-GE3SIS476DN-T1-GE3-CUT TAPESIS476DN-T1-GE
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance2.05 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V, - 16 V--
Qg Gate Charge77 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation52 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height1.04 mm--
Length3.3 mm--
SeriesSIS--
Transistor Type1 N-Channel--
Width3.3 mm--
BrandVishay / Siliconix--
Forward Transconductance Min105 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time17 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time24 ns--
Part # AliasesSIS476DN-GE3--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIS476DN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
SIS476DN-T1-GE3-CUT TAPE New and Original
SIS476DN-T1-GE New and Original
Vishay
Vishay
SIS476DN-T1-GE3 MOSFET N-CH 30V 40A 1212-8 PWR
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