 | |  | |
| PartNumber | SIS862ADN-T1-GE3 | SIS862DN-T1-GE3 | SIS862DN-T1-E3 |
| Description | MOSFET N-Channel 60 V (D-S) MOSFET | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 52 A | 40 A | - |
| Rds On Drain Source Resistance | 11 mOhms | 7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 19.8 nC | 32 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 39 W | 52 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET, PowerPAK | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 6 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6 ns | 5 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | 20 ns | - |
| Typical Turn On Delay Time | 11 ns | 12 ns | - |
| Height | - | 1.04 mm | - |
| Length | - | 3.3 mm | - |
| Series | - | SIS | - |
| Width | - | 3.3 mm | - |
| Forward Transconductance Min | - | 60 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIS862ADN-T1-GE3 | MOSFET N-Channel 60 V (D-S) MOSFET | |
| SIS862DN-T1-GE3 | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8 | ||
| SIS862DN-T1-E3 | New and Original | ||
| SIS86C22 | New and Original | ||
Vishay |
SIS862DN-T1-GE3 | MOSFET N-CH 60V 40A 1212 |