 |  | | |
| PartNumber | SISS23DN-T1-GE3 | SISS23DN | SISS23DNT1GE3 |
| Description | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S | Power Field-Effect Transisto | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 3.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 300 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 57 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SIS | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 44 S | - | - |
| Fall Time | 50 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 140 ns | - | - |
| Typical Turn On Delay Time | 45 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISS23DN-T1-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S | |
| SISS23DN | New and Original | ||
| SISS23DNT1GE3 | Power Field-Effect Transisto | ||
Vishay |
SISS23DN-T1-GE3 | MOSFET P-CH 20V 50A PPAK 1212-8S |