PartNumber | SISS32DN-T1-GE3 | SISS30DN-T1-GE3 | SISS30LDN-T1-GE3 |
Description | MOSFET 80V Vds; 20V Vgs PowerPAK 1212-8S | MOSFET 80V Vds; 20V Vgs PowerPAK 1212-8S | MOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8S |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK1212-8 | PowerPAK1212-8 | PowerPAK1212-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
Id Continuous Drain Current | 63 A | 54.7 A | 55.5 A |
Rds On Drain Source Resistance | 7.2 mOhms | 8.25 mOhms | 8.5 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 1 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 42 nC | 40 nC | 50 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 65.7 W | 57 W | 57 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Series | SIS | SIS | SIS |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 50 S | 44 S | 37 S |
Fall Time | 6 ns | 6 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 6 ns | 6 ns | 6 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 19 ns | 19 ns | 26 ns |
Typical Turn On Delay Time | 12 ns | 12 ns | 10 ns |