SISS3

SISS32DN-T1-GE3 vs SISS30DN-T1-GE3 vs SISS30LDN-T1-GE3

 
PartNumberSISS32DN-T1-GE3SISS30DN-T1-GE3SISS30LDN-T1-GE3
DescriptionMOSFET 80V Vds; 20V Vgs PowerPAK 1212-8SMOSFET 80V Vds; 20V Vgs PowerPAK 1212-8SMOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8S
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK1212-8PowerPAK1212-8PowerPAK1212-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V80 V
Id Continuous Drain Current63 A54.7 A55.5 A
Rds On Drain Source Resistance7.2 mOhms8.25 mOhms8.5 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge42 nC40 nC50 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation65.7 W57 W57 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReelReelReel
SeriesSISSISSIS
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min50 S44 S37 S
Fall Time6 ns6 ns6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time6 ns6 ns6 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time19 ns19 ns26 ns
Typical Turn On Delay Time12 ns12 ns10 ns
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SISS32DN-T1-GE3 MOSFET 80V Vds; 20V Vgs PowerPAK 1212-8S
SISS30DN-T1-GE3 MOSFET 80V Vds; 20V Vgs PowerPAK 1212-8S
SISS30LDN-T1-GE3 MOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8S
Vishay
Vishay
SISS30DN-T1-GE3 N-Channel 80-V (D-S) MOSFET PowerPAK 1212-8S 250M SG , 8.25 m @ 10V 8.2 m @ 7.5V m @ 4.5V
SISS32DN-T1-GE3 N-Channel 80-V (D-S) MOSFET PowerPAK 1212-8S 250M SG 2 mil , 7.2 m @ 10V 7 m @ 7.5V m @ 4.5V
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