PartNumber | SIZ710DT-T1 | SIZ710DT | SIZ710DT-T1-GE |
Description | |||
Manufacturer | Vishay Siliconix | VISHAY | - |
Product Category | FETs - Arrays | FETs - Arrays | - |
Series | TrenchFETR | - | - |
Packaging | Digi-ReelR Alternate Packaging | - | - |
Part Aliases | SIZ710DT-GE3 | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | 6-PowerPair | - | - |
Technology | Si | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Number of Channels | 2 Channel | - | - |
Supplier Device Package | 6-PowerPair | - | - |
Configuration | Dual | - | - |
FET Type | 2 N-Channel (Half Bridge) | - | - |
Power Max | 27W, 48W | - | - |
Transistor Type | 2 N-Channel | - | - |
Drain to Source Voltage Vdss | 20V | - | - |
Input Capacitance Ciss Vds | 820pF @ 10V | - | - |
FET Feature | Logic Level Gate | - | - |
Current Continuous Drain Id 25°C | 16A, 35A | - | - |
Rds On Max Id Vgs | 6.8 mOhm @ 19A, 10V | - | - |
Vgs th Max Id | 2.2V @ 250μA | - | - |
Gate Charge Qg Vgs | 18nC @ 10V | - | - |
Pd Power Dissipation | 27 W 48 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Vgs Gate Source Voltage | +/- 20 V | - | - |
Id Continuous Drain Current | 16 A | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Vgs th Gate Source Threshold Voltage | 1 V to 2.2 V | - | - |
Rds On Drain Source Resistance | 5.5 mOhms 2.7 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Qg Gate Charge | 11.5 nC 38 nC | - | - |
Forward Transconductance Min | 45 S 85 S | - | - |