PartNumber | SIZ710DT-T1-GE3 | SIZ710DT-T1 | SIZ710DT-T1-GE |
Description | MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7 | ||
Manufacturer | Vishay | Vishay Siliconix | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | E | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAIR-6x3.7-8 | - | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 16 A, 35 A | - | - |
Rds On Drain Source Resistance | 6.8 mOhms, 3.3 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 18 nC, 60 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 27 W, 48 W | - | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Series | SIZ | TrenchFETR | - |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 45 S, 85 S | - | - |
Fall Time | 12 ns, 12 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 15 ns, 15 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 20 ns, 30 ns | - | - |
Typical Turn On Delay Time | 15 ns, 25 ns | - | - |
Part # Aliases | SIZ710DT-GE3 | - | - |
Part Aliases | - | SIZ710DT-GE3 | - |
Package Case | - | 6-PowerPair | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 6-PowerPair | - |
FET Type | - | 2 N-Channel (Half Bridge) | - |
Power Max | - | 27W, 48W | - |
Drain to Source Voltage Vdss | - | 20V | - |
Input Capacitance Ciss Vds | - | 820pF @ 10V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 16A, 35A | - |
Rds On Max Id Vgs | - | 6.8 mOhm @ 19A, 10V | - |
Vgs th Max Id | - | 2.2V @ 250μA | - |
Gate Charge Qg Vgs | - | 18nC @ 10V | - |
Pd Power Dissipation | - | 27 W 48 W | - |
Vgs Gate Source Voltage | - | +/- 20 V | - |
Id Continuous Drain Current | - | 16 A | - |
Vds Drain Source Breakdown Voltage | - | 20 V | - |
Vgs th Gate Source Threshold Voltage | - | 1 V to 2.2 V | - |
Rds On Drain Source Resistance | - | 5.5 mOhms 2.7 mOhms | - |
Qg Gate Charge | - | 11.5 nC 38 nC | - |
Forward Transconductance Min | - | 45 S 85 S | - |