PartNumber | SIZ916DT-T1-GE3 | SIZ910DT-T1-GE3 | SIZ914DT-T1-GE3 |
Description | MOSFET RECOMMENDED ALT 78-SIZ980DT-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIZ998DT-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIZ980DT-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAIR-6x5-8 | PowerPAIR-6x5-8 | PowerPAIR-6x5-8 |
Number of Channels | 2 Channel | - | 2 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | 30 V |
Id Continuous Drain Current | 16 A, 40 A | - | 16 A, 40 A |
Rds On Drain Source Resistance | 5.3 mOhms, 1.05 mOhms | - | 5.3 mOhms, 1.14 mOhms |
Vgs th Gate Source Threshold Voltage | 1.2 V, 1 V | - | 1.2 V, 1 V |
Vgs Gate Source Voltage | 20 V, - 16 V | - | 20 V, - 16 V |
Qg Gate Charge | 26 nC, 160 nC | - | 26 nC, 99 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 22.7 W, 100 W | - | 22.7 W, 100 W |
Configuration | Dual | - | Dual |
Channel Mode | Enhancement | - | Enhancement |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SIZ | SIZ | SIZ |
Transistor Type | 2 N-Channel | - | 2 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 55 S, 116 S | - | 55 S, 68 S |
Fall Time | 5 ns, 8 ns | - | 5 ns, 19 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns, 55 ns | - | 11 ns, 127 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15 ns, 44 ns | - | 15 ns, 40 ns |
Typical Turn On Delay Time | 16 ns, 36 ns | - | 16 ns, 40 ns |
Height | - | 0.75 mm | 0.75 mm |
Length | - | 6 mm | 6 mm |
Width | - | 5 mm | 5 mm |
Part # Aliases | - | SIZ910DT-GE3 | - |