SMMBT3904LT1

SMMBT3904LT1G vs SMMBT3904LT1 vs SMMBT3904LT1G-CUT TAPE

 
PartNumberSMMBT3904LT1GSMMBT3904LT1SMMBT3904LT1G-CUT TAPE
DescriptionBipolar Transistors - BJT SS GP XSTR SPCL TR
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.3 V0.3 V-
Maximum DC Collector Current900 mA200 mA-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMBT3904LMMBT3904L-
DC Current Gain hFE Max300300-
PackagingReelDigi-ReelR Alternate Packaging-
BrandON Semiconductor--
Continuous Collector Current200 mA200 mA-
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.050717 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3 (TO-236)-
Power Max-300mW-
Transistor Type-NPN-
Current Collector Ic Max-200mA-
Voltage Collector Emitter Breakdown Max-40V-
DC Current Gain hFE Min Ic Vce-100 @ 10mA, 1V-
Vce Saturation Max Ib Ic-300mV @ 5mA, 50mA-
Current Collector Cutoff Max---
Frequency Transition-300MHz-
Pd Power Dissipation-300 mW-
Collector Emitter Voltage VCEO Max-40 V-
Collector Base Voltage VCBO-60 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-30-
Manufacturer Part # Description RFQ
SMMBT3904LT1G Bipolar Transistors - BJT SS GP XSTR SPCL TR
SMMBT3904LT1 New and Original
SMMBT3904LT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
SMMBT3904LT1G Bipolar Transistors - BJT SS GP XSTR SPCL TR
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