 | |  | |
| PartNumber | SMMBT5551LT1G | SMMBT5551LT3G | SMMBT5551LT1 |
| Description | Bipolar Transistors - BJT SS HV XSTR SPCL TR | Bipolar Transistors - BJT SS SOT23 HV XSTR SPCL TR | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 160 V | 160 V | - |
| Collector Base Voltage VCBO | 180 V | 180 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 0.25 V | 0.25 V | - |
| Maximum DC Collector Current | 600 mA | 600 mA | 0.06 A |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | MMBT5551L | MMBT5551L | MMBT5551L |
| DC Current Gain hFE Max | 250 | 250 | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 600 V | 600 V | - |
| DC Collector/Base Gain hfe Min | 20 | 20 | - |
| Pd Power Dissipation | 300 mW | 300 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.003951 oz | 0.000282 oz | - |
| Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-23-3 (TO-236) |
| Power Max | - | - | 225mW |
| Transistor Type | - | - | NPN |
| Current Collector Ic Max | - | - | 600mA |
| Voltage Collector Emitter Breakdown Max | - | - | 160V |
| DC Current Gain hFE Min Ic Vce | - | - | 80 @ 10mA, 5V |
| Vce Saturation Max Ib Ic | - | - | 200mV @ 5mA, 50mA |
| Current Collector Cutoff Max | - | - | 100nA |
| Frequency Transition | - | - | - |
| Pd Power Dissipation | - | - | 300 mW |
| Collector Emitter Voltage VCEO Max | - | - | 160 V |
| Collector Base Voltage VCBO | - | - | 180 V |
| Emitter Base Voltage VEBO | - | - | 6 V |
| DC Collector Base Gain hfe Min | - | - | 80 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| SMMBT5551LT1G | Bipolar Transistors - BJT SS HV XSTR SPCL TR | ||
| SMMBT5551LT3G | Bipolar Transistors - BJT SS SOT23 HV XSTR SPCL TR | ||
| SMMBT5551LT1 | New and Original | ||
ON Semiconductor |
SMMBT5551LT3G | TRANS NPN 160V 0.6A SOT23 | |
| SMMBT5551LT1G | Bipolar Transistors - BJT SS HV XSTR SPCL TR |