PartNumber | SPA20N65C3 | SPA20N65C3 20N65C3 | SPA20N65C3,SPA15N60C3,20 |
Description | IGBT Transistors MOSFET N-Ch 650V 20.7A TO220FP-3 CoolMOS C3 | ||
Manufacturer | INF | - | - |
Product Category | FETs - Single | - | - |
Series | CoolMOS C3 | - | - |
Packaging | Tube | - | - |
Part Aliases | SP000216362 SPA20N65C3XK SPA20N65C3XKSA1 | - | - |
Unit Weight | 0.211644 oz | - | - |
Mounting Style | Through Hole | - | - |
Tradename | CoolMOS | - | - |
Package Case | TO-220-3 | - | - |
Technology | Si | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single | - | - |
Transistor Type | 1 N-Channel | - | - |
Pd Power Dissipation | 34.5 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 4.5 ns | - | - |
Rise Time | 5 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 20.7 A | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Rds On Drain Source Resistance | 190 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 67 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Channel Mode | Enhancement | - | - |