| PartNumber | SPB18P06PGATMA1 | SPB18P06P G | SPB18P06P |
| Description | MOSFET P-Ch -60V 18.6A D2PAK-2 | MOSFET P-Ch -60V 18.6A D2PAK-2 | MOSFET P-CH 60V 18.7A D2PAK |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | PG-TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 18.7 A | 18.7 A | - |
| Rds On Drain Source Resistance | 101 mOhms | 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 2.1 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | - 28 nC | - 21 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 81.1 W | 81.1 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | XPB18P06 | SPB18P06 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 5 S | 5 S | - |
| Fall Time | 11 ns | 11 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5.8 ns | 5.8 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | 25 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Part # Aliases | G SP000102181 SPB18P06P SPB18P6PGXT | SP000102181 SPB18P06PGATMA1 SPB18P6PGXT | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Tradename | - | SIPMOS | - |