SPD

SPD04N60C3ATMA1 vs SPD04N60C3BTMA1 vs SPD04N60S5

 
PartNumberSPD04N60C3ATMA1SPD04N60C3BTMA1SPD04N60S5
DescriptionMOSFET LOW POWER_LEGACYMOSFET LOW POWER_LEGACYIGBT Transistors MOSFET N-Ch 600V 4.5A DPAK-2 CoolMOS S5
ManufacturerInfineonInfineonINF
Product CategoryMOSFETMOSFETFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Vds Drain Source Breakdown Voltage600 V--
TradenameCoolMOS-CoolMOS
PackagingReelReelReel
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesCoolMOS C3-CoolMOS S5
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity2500--
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001117764 SPD04N60C3SP000313944 SPD04N60C3BTMA1-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Part Aliases--SP000313946 SPD04N60S5BTMA1 SPD04N60S5XT
Package Case--TO-252-3
Number of Channels--1 Channel
Configuration--Single
Transistor Type--1 N-Channel
Pd Power Dissipation--50 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--15 ns
Rise Time--30 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--4.5 A
Vds Drain Source Breakdown Voltage--600 V
Rds On Drain Source Resistance--950 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--60 ns
Typical Turn On Delay Time--55 ns
Channel Mode--Enhancement
  • Start with
  • SPD 929
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
SPD06N80C3ATMA1 MOSFET LOW POWER_LEGACY
SPD04N80C3ATMA1 MOSFET LOW POWER_LEGACY
SPD04P10P G MOSFET P-Ch -100V -4A DPAK-2
SPD04P10PGBTMA1 MOSFET P-Ch -100V -4A DPAK-2
SPD06N60C3ATMA1 MOSFET LOW POWER_LEGACY
SPD04N60C3ATMA1 MOSFET LOW POWER_LEGACY
SPD04P10PLGBTMA1 MOSFET P-CH 100V 4.2A TO252-3
SPD04N60S5 IGBT Transistors MOSFET N-Ch 600V 4.5A DPAK-2 CoolMOS S5
SPD04N60S5BTMA1 MOSFET N-CH 600V 4.5A TO252
SPD06N80C3ATMA1 MOSFET N-CH 800V 6A 3TO252
SPD04N60C3BTMA1 MOSFET N-CH 650V 4.5A DPAK
SPD04N60C3ATMA1 MOSFET N-CH 600V 4.5A TO252-3
SPD06N60C3ATMA1 MOSFET N-CH 600V 6.2A TO-252
SPD06N60C3BTMA1 MOSFET N-CH 650V 6.2A TO-252
SPD04N80C3ATMA1 MOSFET N-CH 800V 4A 3TO252
SPD04N80C3BTMA1 MOSFET N-CH 800V 4A TO-252
SPD04P10P G MOSFET P-Ch -100V -4A DPAK-2
SPD04P10PGBTMA1 MOSFET P-CH 100V 4A TO252-3
SPD06N80C3BTMA1 MOSFET N-CH 800V 6A DPAK
Infineon Technologies
Infineon Technologies
SPD04N80C3BTMA1 MOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3
SPD06N80C3BTMA1 MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3
SPD04P10PLGBTMA1 MOSFET SMALL SIGNAL+P-CH
SPD04N60S5BTMA1 MOSFET LOW POWER_LEGACY
SPD04N60C3BTMA1 MOSFET LOW POWER_LEGACY
SPD06N80C3 IGBT Transistors MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3
SPD04N80C3 IGBT Transistors MOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3
SPD06N60C3 MOSFET N-Ch 650V 6.2A DPAK-2 CoolMOS C3
SPD06N80C3ATMA1-CUT TAPE New and Original
SPD04N60C3,SPD06N80C3, New and Original
SPD04N60C3D-PACK New and Original
SPD04N60C3G New and Original
SPD04N60C3XT New and Original
SPD04N80C3,D04N80C3, New and Original
SPD04N80C3/SL4N80CD New and Original
SPD04P10P New and Original
SPD04P10PL G Trans MOSFET P-CH 100V 4.2A 3-Pin(2+Tab) TO-252 (Alt: SPD04P10PL G)
SPD04P10PLG -100V,-4.2A,P Channel Power MOSFET
SPD06N80C3(SP001117772) New and Original
SPD06N80C3(SP001117772)- New and Original
SPD06N80C3,06N80C3 New and Original
SPD06N80C3S New and Original
SPD06N80C3XT MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3
SPD0730-220M New and Original
SPD0730-R33M New and Original
SPD0735-0R10M New and Original
SPD0735-1R0M-PF New and Original
SPD04P10PG Power Field-Effect Transistor, 4A I(D), 100V, 1000ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SPD0735-0R68M-PF New and Original
SPD0735-2R2M-PF New and Original
SPD0735-3R3M New and Original
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