SPD06N60C3ATMA1

SPD06N60C3ATMA1
Mfr. #:
SPD06N60C3ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LOW POWER_LEGACY
Lifecycle:
New from this manufacturer.
Datasheet:
SPD06N60C3ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SPD06N60C3ATMA1 DatasheetSPD06N60C3ATMA1 Datasheet (P4-P6)SPD06N60C3ATMA1 Datasheet (P7-P9)SPD06N60C3ATMA1 Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
6.2 A
Rds On - Drain-Source Resistance:
680 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
31 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
74 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS C3
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
5.6 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
52 ns
Typical Turn-On Delay Time:
7 ns
Part # Aliases:
SP001117770 SPD06N60C3
Unit Weight:
0.139332 oz
Tags
SPD06N6, SPD06, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***k
    S***k
    RU

    ok

    2019-06-22
    D***v
    D***v
    RU

    Ordered with brazed contacts came parts

    2019-06-26
Part # Mfg. Description Stock Price
SPD06N60C3ATMA1
DISTI # V72:2272_06383796
Infineon Technologies AGTrans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2450
  • 1000:$0.8304
  • 500:$1.0037
  • 250:$1.1658
  • 100:$1.1779
  • 25:$1.4788
  • 10:$1.4938
  • 1:$1.9501
SPD06N60C3ATMA1
DISTI # V36:1790_06383796
Infineon Technologies AGTrans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 2500000:$0.7396
  • 1250000:$0.7399
  • 250000:$0.7787
  • 25000:$0.8524
  • 2500:$0.8650
SPD06N60C3ATMA1
DISTI # SPD06N60C3ATMA1-ND
Infineon Technologies AGMOSFET N-CH 600V 6.2A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
  • 2500:$0.8650
SPD06N60C3ATMA1
DISTI # 32892568
Infineon Technologies AGTrans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 10000:$0.7554
  • 5000:$0.7861
  • 2500:$0.8158
SPD06N60C3ATMA1
DISTI # 30530437
Infineon Technologies AGTrans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2450
  • 1000:$0.8304
  • 500:$1.0037
  • 250:$1.1658
  • 100:$1.1779
  • 25:$1.4788
  • 10:$1.4938
  • 9:$1.9501
SPD06N60C3ATMA1
DISTI # SPD06N60C3ATMA1
Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 6.2A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD06N60C3ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.7749
  • 15000:$0.7889
  • 10000:$0.8159
  • 5000:$0.8469
  • 2500:$0.8789
SPD06N60C3ATMA1
DISTI # SP001117770
Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 6.2A 3-Pin TO-252 T/R (Alt: SP001117770)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.6769
  • 15000:€0.7249
  • 10000:€0.7809
  • 5000:€0.8459
  • 2500:€1.0159
SPD06N60C3ATMA1
DISTI # 33P8207
Infineon Technologies AGMOSFET, N CHANNEL, 650V, 6.2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.68ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    SPD06N60C3ATMA1
    DISTI # 726-SPD06N60C3ATMA1
    Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant
    7580
    • 1:$1.7900
    • 10:$1.5200
    • 100:$1.2200
    • 500:$1.0600
    • 1000:$0.8850
    • 2500:$0.8240
    • 5000:$0.7940
    • 10000:$0.7630
    SPD06N60C3ATMA1
    DISTI # 1664109RL
    Infineon Technologies AGMOSFET, N, TO-252
    RoHS: Compliant
    0
    • 5000:$1.2600
    • 1000:$1.2900
    • 500:$1.4500
    • 250:$1.5400
    • 100:$1.6400
    • 25:$2.0600
    • 5:$2.2600
    SPD06N60C3ATMA1
    DISTI # 1664109
    Infineon Technologies AGMOSFET, N, TO-252
    RoHS: Compliant
    0
    • 5000:$1.2600
    • 1000:$1.2900
    • 500:$1.4500
    • 250:$1.5400
    • 100:$1.6400
    • 25:$2.0600
    • 5:$2.2600
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    Availability
    Stock:
    Available
    On Order:
    1990
    Enter Quantity:
    Current price of SPD06N60C3ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.79
    $1.79
    10
    $1.52
    $15.20
    100
    $1.22
    $122.00
    500
    $1.06
    $530.00
    1000
    $0.88
    $885.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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