PartNumber | SPD04N60C3ATMA1 | SPD04N60C3BTMA1 | SPD04N60C3 |
Description | MOSFET LOW POWER_LEGACY | MOSFET LOW POWER_LEGACY | IGBT Transistors MOSFET N-Ch 600V 4.5A DPAK-2 CoolMOS C3 |
Manufacturer | Infineon | Infineon | infineon |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Tradename | CoolMOS | - | CoolMOS |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | CoolMOS C3 | - | CoolMOS C3 |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SP001117764 SPD04N60C3 | SP000313944 SPD04N60C3BTMA1 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Part Aliases | - | - | SP000313944 SPD04N60C3BTMA1 SPD04N60C3XT |
Package Case | - | - | TO-252-3 |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 50 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 9.5 ns |
Rise Time | - | - | 2.5 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 4.5 A |
Vds Drain Source Breakdown Voltage | - | - | 600 V |
Rds On Drain Source Resistance | - | - | 950 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 58.5 ns |
Typical Turn On Delay Time | - | - | 6 ns |
Channel Mode | - | - | Enhancement |