PartNumber | SPD08N50C3ATMA1 | SPD08N50 | SPD08N50C3 |
Description | MOSFET LOW POWER_LEGACY | Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) TO-252 | |
Manufacturer | Infineon | INF | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | - | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Series | CoolMOS C3 | CoolMOS C3 | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP001117776 SPD08N50C3 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Part Aliases | - | SP000307395 SPD08N50C3BTMA1 SPD08N50C3XT | - |
Package Case | - | TO-252-3 | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 N-Channel | - |
Pd Power Dissipation | - | 83 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 7 ns | - |
Rise Time | - | 5 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 7.6 A | - |
Vds Drain Source Breakdown Voltage | - | 500 V | - |
Rds On Drain Source Resistance | - | 600 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 60 ns | - |
Typical Turn On Delay Time | - | 6 ns | - |
Channel Mode | - | Enhancement | - |