PartNumber | SPP02N60C3XKSA1 | SPP02N60C3HKSA1 | SPP02N60S5HKSA1 |
Description | IGBT Transistors MOSFET N-Ch 650V 1.8A TO220-3 | MOSFET N-CH 650V 1.8A TO-220AB | MOSFET N-CH 600V 1.8A TO-220 |
Manufacturer | Infineon Technologies | - | - |
Product Category | Transistors - FETs, MOSFETs - Single | - | - |
Series | SPP02N60 | - | - |
Packaging | Tube | - | - |
Part Aliases | SP000681014 SPP02N60C3 SPP02N60C3XK | - | - |
Unit Weight | 0.211644 oz | - | - |
Mounting Style | Through Hole | - | - |
Tradename | CoolMOS | - | - |
Package Case | TO-220-3 | - | - |
Technology | Si | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single | - | - |
Transistor Type | 1 N-Channel | - | - |
Pd Power Dissipation | 25 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 12 ns | - | - |
Rise Time | 3 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 1.8 A | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Rds On Drain Source Resistance | 3 Ohms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 68 ns | - | - |
Typical Turn On Delay Time | 6 ns | - | - |
Qg Gate Charge | 9.5 nC | - | - |