SPP80N06S

SPP80N06S08AKSA1 vs SPP80N06S-08 vs SPP80N06S-08(1N0608)

 
PartNumberSPP80N06S08AKSA1SPP80N06S-08SPP80N06S-08(1N0608)
DescriptionMOSFET N-Ch 55V 80A TO220-3Darlington Transistors MOSFET N-Ch 55V 80A TO220-3
ManufacturerInfineonINF-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance6.5 mOhms--
Vgs th Gate Source Threshold Voltage2.1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge187 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height15.65 mm--
Length10 mm--
SeriesXPP80N06SPP80N06S-
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min73 S--
Fall Time32 ns32 ns-
Product TypeMOSFET--
Rise Time53 ns53 ns-
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time54 ns54 ns-
Typical Turn On Delay Time22 ns22 ns-
Part # AliasesSP000084810 SPP80N06S-08 SPP8N6S8XK--
Unit Weight0.211644 oz0.211644 oz-
Part Aliases-SP000084810 SPP80N06S08AKSA1 SPP80N06S08XK-
Package Case-TO-220-3-
Pd Power Dissipation-300 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-80 A-
Vds Drain Source Breakdown Voltage-55 V-
Rds On Drain Source Resistance-8 mOhms-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
SPP80N06S08AKSA1 MOSFET N-Ch 55V 80A TO220-3
SPP80N06S-08 Darlington Transistors MOSFET N-Ch 55V 80A TO220-3
SPP80N06S2-08 2N0608 New and Original
SPP80N06S-08(1N0608) New and Original
SPP80N06S2-07(2N0607) New and Original
SPP80N06S2-08(2N0608) New and Original
SPP80N06S2-09(2N0609) New and Original
SPP80N06S209 Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SPP80N06S2L-05(2N06L05) New and Original
SPP80N06S2L-05+ MOSFET N-CH 55V 80A TO-220
SPP80N06S2L-07(2N06L07) New and Original
SPP80N06S2L-09(2N06L09) New and Original
SPP80N06S2L-11(2N06L11) New and Original
SPP80N06S2L-90 New and Original
SPP80N06S2L-H5(2N06LH5) New and Original
SPP80N06S2L-H5/2N06LH5 New and Original
SPP80N06S2L07 New and Original
Infineon Technologies
Infineon Technologies
SPP80N06S08AKSA1 MOSFET N-CH 55V 80A TO-220
SPP80N06S2-05 MOSFET N-CH 55V 80A TO-220
SPP80N06S2-07 MOSFET N-CH 55V 80A TO-220
SPP80N06S2-08 MOSFET N-CH 55V 80A TO-220
SPP80N06S2-09 MOSFET N-CH 55V 80A TO-220
SPP80N06S2-H5 MOSFET N-CH 55V 80A TO-220
SPP80N06S2L-05 MOSFET N-CH 55V 80A TO-220
SPP80N06S2L-06 MOSFET N-CH 55V 80A TO-220
SPP80N06S2L-07 MOSFET N-CH 55V 80A TO-220
SPP80N06S2L-09 MOSFET N-CH 55V 80A TO-220
SPP80N06S2L-11 MOSFET N-CH 55V 80A TO-220
SPP80N06S2L-H5 MOSFET N-CH 55V 80A TO-220
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